|Title of the article||
SIMULATION OF THE CURRENT TRANSPORT PROCESS IN CARBON NANOTUBES
Bulyarsky Sergey Viktorovich, Doctor of physico-mathematical sciences, professor, head of sub-department of engineering physics, Ulyanovsk State University, Honored Science Worker of the Russian Federation, corresponding member of the Tatarstan Science Academy, firstname.lastname@example.org
In work dependence of the resulted speed tunnel recombnations from voltage of direct displacement is considered. Two approaches describing dependence on voltage are resulted: under condition of process restriction recombnations tunneling and a condition of restriction in the speed recombnations in a quantum hole. It is shown that from the generalized model recombnations it is possible to receive step increase of a current from pressure at increase in pressure of displacement at the sample.
speed tunnel recombnations, process restriction recombnations, quantum hole.
Дата обновления: 11.07.2014 11:48