Article 1439

Title of the article

SIMULATION OF THE CURRENT TRANSPORT PROCESS IN CARBON NANOTUBES

Authors

Bulyarsky Sergey Viktorovich, Doctor of physico-mathematical sciences, professor, head of sub-department of engineering physics, Ulyanovsk State University, Honored Science Worker of the Russian Federation, corresponding member of the Tatarstan Science Academy, bsv@ulsu.ru
Vostretsova Lyubov Nikolaevna, Candidate of physico-mathematical sciences, senior lecturer, sub-department of engineering physics, Ulyanovsk State University, bsv@ulsu.ru

Index UDK

538.95; 539.21

Abstract

In work dependence of the resulted speed tunnel recombnations from voltage of direct displacement is considered. Two approaches describing dependence on voltage are resulted: under condition of process restriction recombnations tunneling and a condition of restriction in the speed recombnations in a quantum hole. It is shown that from the generalized model recombnations it is possible to receive step increase of a current from pressure at increase in pressure of displacement at the sample.

Key words

speed tunnel recombnations, process restriction recombnations, quantum hole.

Download PDF

 

Дата создания: 11.07.2014 10:07
Дата обновления: 11.07.2014 11:48